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600mA Silicon Power Transistor NPN Power Transistor High Current

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600mA Silicon Power Transistor NPN Power Transistor High Current

Name: 600mA Silicon Power Transistor NPN Power Transistor High Current
Brand: OTOMO
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : OTOMO

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : A42

Collector-Base Voltage : 310V

Emitter-Base Voltage : 5V

Tstg : -55～+150℃

Material : Silicon

Collector Current : 600 mA

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SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :D965A

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	310	V
VCEO	Collector-Emitter Voltage	305	V
VEBO	Emitter-Base Voltage	5	V
I_C	Collector Current -Continuous	200	mA
ICM	Collector Current -Pulsed	500	mA
P_C	Collector Power Dissipation	500	mW
RθJA	Thermal Resistance from Junction to Ambient	250	℃/W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100µA,I_E=0	310			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=1mA,I_B=0	305			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=100µA,I_C=0	5			V
Collector cut-off current	ICBO	V_CB=200V,I_E=0			0.25	µA
	ICEX	V_CE=100V,V_X=5V			5	µA
		V_CE=300V,V_X=5V			10	µA
Emitter cut-off current	IEBO	V_EB=5V,I_C=0			0.1	µA
DC current gain	hFE(1)	V_CE=10V, I_C=1mA	60
	hFE(2)	V_CE=10V, I_C=10mA	100		300
	hFE(3)	V_CE=10V, I_C=30mA	75
Collector-emitter saturation voltage	VCE(sat)	I_C=20mA,I_B=2mA			0.2	V
Base-emitter saturation voltage	VBE(sat)	I_C=20mA,I_B=2mA			0.9	V
Transition frequency	f_T	VCE=20V,IC=10mA, f=30MHz	50			MHz

Typical Characteristics

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	1.400	1.600	0.055	0.063
b	0.320	0.520	0.013	0.020
b1	0.400	0.580	0.016	0.023
c	0.350	0.440	0.014	0.017
D	4.400	4.600	0.173	0.181
D1	1.550 REF.		0.061 REF.
E	2.300	2.600	0.091	0.102
E1	3.940	4.250	0.155	0.167
e	1.500 TYP.		0.060 TYP.
e1	3.000 TYP.		0.118 TYP.
L	0.900	1.200	0.035	0.047

600mA Silicon Power Transistor NPN Power Transistor High Current

SOT-89-3L Suggested Pad Layout

SOT-89-3L Tape and Reel
600mA Silicon Power Transistor NPN Power Transistor High Current

Product Tags:

600mA Silicon Power Transistor

Silicon Power Transistor High Current

NPN Power Transistor High Current

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