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Beijing Silk Road Enterprise Management Services Co.,LTD
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200v Silicon Power Transistor High Current Transistor Low Leakage

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200v Silicon Power Transistor High Current Transistor Low Leakage

Place of Origin : ShenZhen China

Brand Name : OTOMO

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : MMBD1501A

Type : SWITCHING DIODESOD

FEATURE : Low Leakage

Power mosfet transistor : SOT-23 Plastic-Encapsulate Diodes

DC Blocking Voltage : 200v

Product ID : MMBD1501A

Power Dissipation : 350mW

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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes


FEATURE
 Low Leakage
 High Conductance

Marking :A11

200v Silicon Power Transistor High Current Transistor Low Leakage

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
200v Silicon Power Transistor High Current Transistor Low Leakage



ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

200v Silicon Power Transistor High Current Transistor Low Leakage





Typical Characterisitics


200v Silicon Power Transistor High Current Transistor Low Leakage200v Silicon Power Transistor High Current Transistor Low Leakage









Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°


Product Tags:

200v Silicon Power Transistor

      

Silicon Power Transistor Low Leakage

      

High Current Transistor Low Leakage

      
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